5SHX1060H0003 ABB 可控硅高压卡件

5SHX1060H0003可控硅高压卡件VMIVME-7700具有板载BIOS设置程序，可控制许多配置选项。这些选项保存在一个特殊的非易失性文件中，电池支持的存储芯片，统称为电路板的CMOS配置”。
5SHX1060H0003 ABB 可控硅高压卡件
F系列FENA-21是两端口以太网适配器，支持多个通信协议:PROFINET IO、Ethernet/IP和Modbus TCP。协议的选择在变频器内通过一个参数完成。
5SHX1060H0003 ABB 可控硅高压卡件支持PROFINET IO DP-V1通信。通过FENA-01/-11模块，PROFINET 网络可利用PROFIdrive配置文件或ABB 变频器配置文件。此外，还提供两种透明模式一一分别针对16位和32位的字。
5SHX1060H0003 ABB 可控硅高压卡件有关从应用电源的那一刻起，硬件的行为。VMIVME-7700出厂时带有硬盘驱动器类型配置集CMOS中的自动。VMIVME-7700 BIOS设置程序的详细信息包含在附录C中。VMIVME7700提供前面板访问PMC扩展站点VGA连接器，两个10/100以太网连接器，手动复位开关，COM 1和2，双USB和状态指示灯。VMIVME-7700前面板的图纸如图所示图1-4中所示。前面板连接器和指示灯的标签如下：LAN 1 10/100 Mbit以太网连接器LAN 2 10/100 Mbit以太网连接器SVGA SVGA视频接口RST手动复位开关COM 1:2两个Micro DB9串行连接器（COM 1和2）M/K双鼠标/键盘连接器USB两个单独的USB接口RPIB状态指示灯

5SHX1060H0003

5SHX1060H0003 ABB 可控硅高压卡件技术规格
IGCT是将GTO芯片与反并联二极管和门极驱动电路集成在一起，再与其门极驱动器在外围以低电感方式连接，结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点，
在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT 具有电流大、阻断电压高、开关频率高、可靠性高、结构紧凑、低导通损耗等特点，而且造成本低，成品率高，有很好的应用前景。己用于电力系统电网装置(100MVA)和的中功率工业驱动装置(5MWIGCT在中压变频器领域内成功的应用了11年的时间(到09年为止)，由于IGCT的高速开关能力无需缓冲电路，因而所需的功率元件数目更少运行的可靠性大大增高。1GCT集 GBT(绝缘门极双极性晶体管)的高速开关特性和GTO(门极关断品闻管)的高阳断电压和低导通损耗特性于一体，一般触发信号通过光纤传输到IGCT单元.在ACS6000的有缘整流单元的相模块里，每相模块由IGCT 和二极管、钳位电容组成，由独立的门

5SHX1060H0003

The 5SHX1060H0003 thyristor high voltage card VMIVME-7700 has an onboard BIOS setup program to control many configuration options. These options are saved in a special non-volatile file of the battery-supported memory chip, collectively known as the CMOS configuration of the circuit board.”
5SHX1060H0003 ABB thyristor high voltage clamp
The F-Series FENA-21 is a two-port Ethernet adapter that supports multiple communication protocols :PROFINET IO, Ethernet/IP, and Modbus TCP. The selection of the protocol is done by a parameter in the inverter.
5SHX1060H0003 ABB thyristor high voltage card supports PROFINET IO DP-V1 communication. With the FENA-01/-11 module, the PROFINET network can make use of the PROFIdrive profile or ABB inverter profile. In addition, two transparency modes are available for 16-bit and 32-bit words respectively.
5SHX1060H0003 ABB thyristor high voltage card is concerned with the behavior of the hardware from the moment the power supply is applied. The VMIVME-7700 comes out of the factory with hard drive type configuration set Automatic in CMOS. Details of the VMIVME-7700 BIOS setup program are included in Appendix C. The VMIVME7700 offers front panel access to the PMC expansion site with VGA connectors, two 10/100 Ethernet connectors, manual reset switches, COM 1 and 2, dual USB and status indicators. Figure 1-4 shows the front panel of the VMIVME-7700. Front panel connectors and indicators are labeled as follows: LAN 1 10/100 Mbit Ethernet connector LAN 2 10/100 Mbit Ethernet connector SVGA SVGA Video interface RST Manual reset switch COM 1:2 Two Micro DB9 serial connectors (COM 1 and 2) M/K dual mouse/keyboard connector USB Two separate USB port RPIB status indicators
5SHX1060H0003 ABB thyristor high voltage clamp technical specifications
IGCT integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor.
The performance of thyristor is displayed in the on-stage, and the characteristics of transistor are displayed in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect. It has been used in power system power grid devices (100MVA) and medium power industrial drive devices (5MWIGCT) in the field of medium voltage inverter has been successfully applied for 11 years (until 2009), because the high-speed switching capability of IGCT does not need buffer circuits, so the number of power components required is less and the reliability of operation is greatly increased. The 1GCT combines the high-speed switching characteristics of GBT(insulated gate bipolar transistor) with the high positive breaking voltage and low on-loss characteristics of GTO(gate shutdown detector), and the general trigger signal is transmitted to the IGCT unit through optical fibers. In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT, a diode, and a clamp capacitor, and is powered by an independent gate power supply unit GUSP

5SHX1060H0003