5SHY3545L0016 ABB 可控硅工业模块

5SHY3545L0016 ABB 可控硅工业模块是支撑能源领域发展的核心部件。为实现3060双碳目标，我国正在超常规推动新能源发电、大容量输配电和电气化交通等领域，对电压等级4.5KV以上的功率器件需求急速增长。提高器件电压和容量可以减少器件串并联数量、缩减装备体积和成本，是解决城市用地紧张、降低海上风电平台建设成本的关键。然而，受工作机理和制备工艺限制，IGBT器件最大功率等级为4.5kV/3KA和6.5kV/0.75kA，已接近瓶颈，无法满足能源发展需求。因此，需更高电压、更大容量、更高可靠性和更低制造成本的功率半导体器件解决方案。
2020年，中国功率半导体市场规模达2000亿元，但90%以上依赖进口，尤其是4.5kV以上器件，近乎全部进口。亚需寻求自主可控的功率半导体器件国产替代方案。

5SHY3545L0016

5SHY3545L0016 ABB 可控硅工业模块解决方案
本技术面向新能源发电和输配电领域大容量、高可靠的需求，提出了自主化IGCT器件(集成门极换流晶闸管)的设计、制备和驱动控制方案，可以提高阳断电压和关断电流能力、降低器件运行损耗，目可以结合应用工况开展定制优化，如改善器件防爆特性、解决高压装置中的驱动供电问题等，从而实现大容量、高可靠、低成本、高效率的能量管理和功率变换目前团队已研制出4.5kV/5kA和6.5KV/4kA的IGCT器件，功率等级全面覆盖1GBT，且具有向更大容量发展的潜力。与IGBT.MOSFET等晶体管器件相比，本技术提出的IGCT具有通态损耗低、耐受电压高、可靠性高、抗干扰能力强等突出优势，符合能源发展趋势，且制造工艺沿用基本沿用传统的晶闸管路线，制造成本低，国内工艺基础好。

5SHY3545L0016

5SHY3545L0016 ABB thyristor industrial modules are the core components supporting the development of the energy sector. In order to achieve the goal of 3060 double carbon, China is exceptionally promoting new energy generation, large-capacity transmission and distribution and electrified transportation, and the demand for power devices with voltage levels above 4.5KV has grown rapidly. Improving device voltage and capacity can reduce the number of devices in series and parallel, reduce equipment volume and cost, which is the key to solve the shortage of urban land and reduce the cost of offshore wind power platform construction. However, limited by the working mechanism and preparation process, the maximum power level of IGBT devices is 4.5kV/3KA and 6.5kV/0.75kA, which is close to the bottleneck and cannot meet the needs of energy development. Therefore, higher voltage, larger capacity, higher reliability and lower manufacturing cost power semiconductor device solutions are required.
In 2020, China’s power semiconductor market will reach 200 billion yuan, but more than 90% rely on imports, especially devices above 4.5kV, almost all imports. Asia needs to seek domestic alternatives to autonomous and controllable power semiconductor devices.
5SHY3545L0016 ABB thyristor industrial module solution
To meet the demand of large capacity and high reliability in the field of new energy power generation and transmission and distribution, the technology proposes the design, preparation and drive control scheme of autonomous IGCT device (integrated gate commutator thyristor), which can improve the positive off voltage and off current capability and reduce the operating loss of the device, and can be customized and optimized according to the application conditions. Such as improving the explosion-proof characteristics of the device, solving the problem of driving power supply in high voltage devices, etc., so as to achieve large capacity, high reliability, low cost, high efficiency energy management and power conversion. At present, the team has developed 4.5kV/5kA and 6.5KV/4kA IGCT devices, the power level fully covers 1GBT, and has the potential for greater capacity development. Compared with IGBT.MOSFET and other transistor devices, the IGCT proposed by the technology has the advantages of low on-state loss, high withstand voltage, high reliability, strong anti-interference ability, in line with the energy development trend, and the manufacturing process follows the traditional thyristor route, low manufacturing cost, and the domestic process foundation is good.

5SHY3545L0016