5SHY3545L0020 ABB 5SHY系列可控硅

型号: 5SHY3545L0020
5SHY3545L0020 ABB 5SHY系列可控硅
在实时控制过程中，干扰造成比较严重的危害之一就是冲毁RAM中的数据，由于5SHY3545L0020 ABB 5SHY系列可控硅中保存的是各种原始数据、标志变量等，如果被破坏，会造成系统出错或无法运行，根据数据被冲毁的程度，一般可分为三类:
整个RAM数据被冲毁
RAM中某片数据被冲毁
个别数据被冲毁。
在工业控制系统中，5SHY3545L0020 ABB 5SHY系列可控硅的大部分内容是为了进行分析、比较而临时存放的，不允许丢失的数据只占极少部分。在这种情况下，除了这些不允许丢失的数据外，其余大部分内容允许短时间被破坏，最多只引起系统的一个很短时间的波动，快能自动恢复正常。因此，在工控软件中，只要注意对少数不允许丢失的数据保护，一般常用的方法有“校验法”和“设标法”。这两种方法各有千秋，校验法比较繁锁，但查错的可信度高。设标法简单，但对数据表中个别数据冲毁的情况，查错则无难为力。在编程中一般应综合使用，其具体做法为:
将RAM工作区重要区域的始端和尾端各设置一个标志码“0”或“1”,对RAM中固定不变的数据表格设置校验字

5SHY3545L0016

5SHY3545L0020 ABB 5SHY系列可控硅是1996年问世的用于巨型电力电子成套装置中的新型电力半导体器件。1GT是一种基于GTO结构、利用集成栅极结构进行栅极硬呕动、采用缓冲层结构及阳极透明发射极技术的新型大功率半导体开关器件，具有晶闸管的通态特性及晶体管的开关特性。由于采用了缓冲结构以及浅层发射极技术，因而使动态损耗降低了约50%，另外，此类器件还在一个芯片上集成了具有良好动态特性的续流二极管，从而以其独特的方式实现了晶闸管的低通态压降、高阻断电压和晶体管稳定的开关特性有机结合.
5SHY3545L0020 ABB 5SHY系列可控硅使流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展，给电力电子成套装置带来了新的飞跃。IGCT是将GTO芯片与反并联二极管和栅极驱动电路集成在一起，再与其栅极驱动器在外围以低电感方式连接，结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点，在导通阶段发挥晶闻管的性能，关断阶段呈现晶体管的特性。1GCT具有电流大、电压高、开关频率高、可靠性高、结构紧凑、损耗低等特点，而且造成本低，成品率高，有很好的应用前景。采用晶闸管技术的GTO是常用的大功率开关器件，它相对于采用晶体管技术的IGBT在截止电压上有更言的性能，5SHY3545L0020 3BHE014105R0001 但广泛应用的标准GTO驱动技术造成不均匀的开通和关断过程，需要高成本的dv/dt和di/dt吸收电路和较大功率的栅极驱动单元，因而造成可靠性下降，价格较高，也不利于串联。但是，在大功率MCT技术尚未成熟以前，IGCT已经成为高压大功率低频交流器的优选方案。

5SHY3545L0020

Model: 5SHY3545L0020
5SHY3545L0020 ABB 5SHY series thyristor
In the process of real-time control, one of the more serious hazards caused by interference is to destroy the data in RAM. Since 5SHY3545L0020 ABB 5SHY series SCR stores a variety of original data, marking variables, etc., if damaged, it will cause the system to make errors or fail to operate. According to the degree of data being destroyed, it can be generally divided into three categories:
The entire RAM data was flushed
A piece of data in the RAM is flushed
Individual data was flushed.
In industrial control systems, most of the content of 5SHY3545L0020 ABB 5SHY series thyristors is temporarily stored for analysis and comparison, and only a very small part of the data is not allowed to be lost. In this case, in addition to these data that is not allowed to be lost, most of the rest of the content is allowed to be destroyed for a short time, at most only cause a short period of fluctuations in the system, and quickly restore to normal. Therefore, in the industrial control software, as long as attention is paid to the protection of a small number of data that is not allowed to be lost, the commonly used methods are “calibration method” and “marking method”. These two methods have their own advantages, the verification method is more complicated, but the reliability of error detection is high. The marking method is simple, but in the case of individual data flushing in the data table, it is not difficult to check the error. In general, it should be used comprehensively in programming, and its specific practices are:
Set a flag code “0” or “1” at the beginning and end of the important area of the RAM work area, and set the check word for the fixed data table in the RAM
5SHY3545L0020 ABB 5SHY series SCR is a new type of power semiconductor device introduced in 1996 for use in large power electronics packages. 1GT is a new type of high-power semiconductor switching device based on GTO structure, which adopts integrated gate structure for hard gate retching, buffer layer structure and transparent anode emitter technology. It has the on-state characteristics of thyristor and the switching characteristics of transistor. Due to the use of buffer structure and shallow emitter technology, the dynamic loss is reduced by about 50%, in addition, such devices are also integrated on a chip with good dynamic characteristics of the continuous current diode, so that in its unique way to achieve the low on-state voltage drop, high blocking voltage and transistor stable switching characteristics of the organic combination.

5SHY3545L0020

5SHY3545L0020 ABB 5SHY series SCR has made great progress in terms of power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronics complete sets of devices. IGCT integrates the GTO chip with the anti-parallel diode and the gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and gives play to the performance of the transistor in the on-stage and the characteristics of the transistor in the off-stage. 1GCT has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low loss, and low cost, high yield, and has a good application prospect. GTO using thyristor technology is a commonly used high-power switching device, which has more performance than IGBT using transistor technology in cut-off voltage, 5SHY3545L0020 3BHE014105R0001, but the widely used standard GTO drive technology causes uneven opening and closing process. The need for high cost dv/dt and di/dt absorption circuits and higher power grid drive units, resulting in reduced reliability, higher prices, and is not conducive to series. However, before the high-power MCT technology is not mature, IGCT has become the preferred solution for high-voltage high-power low-frequency communicators.

5SHY3545L0020